MJE182G Transistor Datasheet

NPN BJT | onsemi

NPNTO-225-3High Power
VCEO
100V
Ic Max
3A
Pd Max
12.5W
Gain
50
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Quick Reference

The MJE182G is a NPN bipolar transistor in a TO-225-3 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting form factor
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max12.5WPower dissipation
Gain50DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD139G NPN TO-225-3 80V 1.5A 12.5W
BD681G NPN TO-225-3 100V 4A 40W
MJE243G NPN TO-225-3 100V 4A 15W
View all TO-225-3 NPN Transistors ›