BD681G Transistor Datasheet

NPN BJT | onsemi

NPNTO-225-3High Power
VCEO
100V
Ic Max
4A
Pd Max
40W
Gain
750
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Quick Reference

The BD681G is a NPN bipolar transistor in a TO-225-3 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 4A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting form factor
VCEO100VBreakdown voltage
IC Max4ACollector current
Pd Max40WPower dissipation
Gain750DC current gain
Frequency-Transition frequency
VCE(sat)2.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD139G NPN TO-225-3 80V 1.5A 12.5W
MJE243G NPN TO-225-3 100V 4A 15W
MJE182G NPN TO-225-3 100V 3A 12.5W
View all TO-225-3 NPN Transistors ›