BD237STU-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
100V
Ic Max
15A
Pd Max
1W
Gain
300@0.2A,5V
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Quick Reference

The BD237STU-HXY is a NPN bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 15A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO100VBreakdown voltage
IC Max15ACollector current
Pd Max1WPower dissipation
Gain300@0.2A,5VDC current gain
Frequency50MHzTransition frequency
VCE(sat)500mV@2A,0.2ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD140 NPN TO-126 80V 1.5A 1W
BD139 NPN TO-126 80V 1.5A 12.5W
KTD600K-Y-U/PH NPN TO-126 120V 1A 1.5W
BD681 NPN TO-126 100V 4A 2W
BD441 NPN TO-126 80V 4A 25W
BD139-16 NPN SOT-32-3 80V 1.5A 12.5W
MJE182 NPN TO-126 80V 3A 12.5W
BD681 NPN TO-126 100V 4A 2W
BD13916STU-HXY NPN TO-126 80V 1.5A 1W
View all TO-126 NPN Transistors ›