BD13916STU-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
80V
Ic Max
1.5A
Pd Max
1W
Gain
-
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Quick Reference

The BD13916STU-HXY is a NPN bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 1.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO80VBreakdown voltage
IC Max1.5ACollector current
Pd Max1WPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD140 NPN TO-126 80V 1.5A 1W
BD137G-HYX NPN TO-126 60V 1.5A 1W
BD235 NPN TO-126 60V 2A 1W
BD237STU-HXY NPN TO-126 100V 15A 1W
BD139 NPN TO-126 80V 1.5A 12.5W
KSD1691YSTU NPN TO-126 60V 5A 1.3W
BD681 NPN TO-126 100V 4A 2W
BD441 NPN TO-126 80V 4A 25W
BD139-16 NPN SOT-32-3 80V 1.5A 12.5W
MJE182 NPN TO-126 80V 3A 12.5W
View all TO-126 NPN Transistors ›