MJD122T4G Transistor Datasheet

NPN BJT | onsemi

NPNTO-252(DPAK)General Purpose
VCEO
100V
Ic Max
8A
Pd Max
1.75W
Gain
1000
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Quick Reference

The MJD122T4G is a NPN bipolar transistor in a TO-252(DPAK) package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO100VBreakdown voltage
IC Max8ACollector current
Pd Max1.75WPower dissipation
Gain1000DC current gain
Frequency4MHzTransition frequency
VCE(sat)4VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NSS1C301ET4G NPN TO-252(DPAK) 100V 3A 2.1W
MJD44H11T4G NPN TO-252 80V 8A 50W
MJD31CG NPN TO-252(DPAK) 100V 3A 15W
MJD31CRLG NPN TO-252(DPAK) 100V 3A 15W
NJVMJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD41CQ-13 NPN TO-252(DPAK) 100V 6A 2.7W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD31CUQ-13 NPN TO-252(DPAK) 100V 3A 1.6W
View all TO-252(DPAK) NPN Transistors ›