MJD44H11 Transistor Datasheet

NPN BJT | SPTECH

NPNTO-252(DPAK)High Power
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60
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Quick Reference

The MJD44H11 is a NPN bipolar transistor in a TO-252(DPAK) package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain60DC current gain
Frequency40MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NSS1C301ET4G NPN TO-252(DPAK) 100V 3A 2.1W
MJD44H11T4G NPN TO-252 80V 8A 50W
MJD31CG NPN TO-252(DPAK) 100V 3A 15W
MJD31CRLG NPN TO-252(DPAK) 100V 3A 15W
NJVMJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD41CQ-13 NPN TO-252(DPAK) 100V 6A 2.7W
STD1802T4 NPN TO-252(DPAK) 60V 3A 15W
MJD122T4G NPN TO-252(DPAK) 100V 8A 1.75W
MJD31CUQ-13 NPN TO-252(DPAK) 100V 3A 1.6W
View all TO-252(DPAK) NPN Transistors ›