NSS1C301ET4G Transistor Datasheet

NPN BJT | onsemi

NPNTO-252(DPAK)High Power
VCEO
100V
Ic Max
3A
Pd Max
2.1W
Gain
120
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Quick Reference

The NSS1C301ET4G is a NPN bipolar transistor in a TO-252(DPAK) package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO100VBreakdown voltage
IC Max3ACollector current
Pd Max2.1WPower dissipation
Gain120DC current gain
Frequency120MHzTransition frequency
VCE(sat)250mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD44H11T4G NPN TO-252 80V 8A 50W
MJD31CG NPN TO-252(DPAK) 100V 3A 15W
MJD31CRLG NPN TO-252(DPAK) 100V 3A 15W
NJVMJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD31CT4G NPN TO-252(DPAK) 100V 3A 15W
MJD41CQ-13 NPN TO-252(DPAK) 100V 6A 2.7W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD122T4G NPN TO-252(DPAK) 100V 8A 1.75W
MJD31CUQ-13 NPN TO-252(DPAK) 100V 3A 1.6W
View all TO-252(DPAK) NPN Transistors ›