MJD127T4G Transistor Datasheet

PNP BJT | onsemi

PNPTO-252(DPAK)General Purpose
VCEO
100V
Ic Max
8A
Pd Max
1.75W
Gain
1000
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Quick Reference

The MJD127T4G is a PNP bipolar transistor in a TO-252(DPAK) package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO100VBreakdown voltage
IC Max8ACollector current
Pd Max1.75WPower dissipation
Gain1000DC current gain
Frequency4MHzTransition frequency
VCE(sat)4VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD45H11T4G PNP TO-252(DPAK) 80V 8A 20W
NJVMJD45H11RLG PNP TO-252(DPAK) 80V 8A 20W
MJD45H11 PNP TO-252(DPAK) 80V 8A 20W
NJVMJD127T4G PNP TO-252(DPAK) 100V 8A 20W
MJD45H11G PNP TO-252(DPAK) 80V 8A 20W
View all TO-252(DPAK) PNP Transistors ›