MJD45H11G Transistor Datasheet

PNP BJT | onsemi

PNPTO-252(DPAK)High Power
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60
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Quick Reference

The MJD45H11G is a PNP bipolar transistor in a TO-252(DPAK) package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain60DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo90MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD2955T4G PNP TO-252(DPAK) 60V 10A 20W
MJD45H11T4G PNP TO-252(DPAK) 80V 8A 20W
NJVMJD45H11RLG PNP TO-252(DPAK) 80V 8A 20W
MJD127T4G PNP TO-252(DPAK) 100V 8A 1.75W
MJD45H11 PNP TO-252(DPAK) 80V 8A 20W
NJVMJD127T4G PNP TO-252(DPAK) 100V 8A 20W
View all TO-252(DPAK) PNP Transistors ›