MJE340STU-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
350V
Ic Max
500mA
Pd Max
625mW
Gain
-
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Quick Reference

The MJE340STU-HXY is a NPN bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 350V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO350VBreakdown voltage
IC Max500mACollector current
Pd Max625mWPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE13003(RANGE:20-30) NPN TO-126 400V 1A 1.25W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-252-2L 480V 1.5A 1.25W
MJE340G NPN TO-126 300V 500mA 20W
3DD4244DM NPN TO-126 400V 3A 60W
MJE340 NPN SOT-32-3 300V 500mA 20.8W
View all TO-126 NPN Transistors ›