3DD4242DM-126 Transistor Datasheet

NPN BJT | Jilin Sino-Microelectronics

NPNTO-126High Power
VCEO
400V
Ic Max
1.5A
Pd Max
20W
Gain
22
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Quick Reference

The 3DD4242DM-126 is a NPN bipolar transistor in a TO-126 package, designed for high power applications. It supports a breakdown voltage of 400V and continuous collector current of 1.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJilin Sino-MicroelectronicsOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO400VBreakdown voltage
IC Max1.5ACollector current
Pd Max20WPower dissipation
Gain22DC current gain
Frequency4MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo9VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
MJE13003(RANGE:20-30) NPN TO-126 400V 1A 1.25W
13003 NPN TO-252-2L 480V 1.5A 1.25W
YFW13003 NPN TO-126 480V 1.5A 1.25W
MJE340G NPN TO-126 300V 500mA 20W
3DD4244DM NPN TO-126 400V 3A 60W
MJE340STU-HXY NPN TO-126 350V 500mA 625mW
MJE340 NPN SOT-32-3 300V 500mA 20.8W
View all TO-126 NPN Transistors ›