S-LBTN180Y3T1G Transistor Datasheet

NPN BJT | LRC

NPNSOT-89General Purpose
VCEO
80V
Ic Max
1A
Pd Max
550mW
Gain
63
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Quick Reference

The S-LBTN180Y3T1G is a NPN bipolar transistor in a SOT-89 package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 1A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max550mWPower dissipation
Gain63DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo180MHzEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BCX56-16 NPN SOT-89 80V 1A 1.3W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
BCX56-16 NPN SOT-89 80V 1A 1.3W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
BCX56 NPN SOT-89 80V 1A 1.3W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
BCX55-16 NPN SOT-89 60V 1A 1.3W
BCX56-16 NPN SOT-89 80V 1A 1.3W
View all SOT-89 NPN Transistors ›