ST13003-K-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
500V
Ic Max
1.5A
Pd Max
1.25W
Gain
25
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Quick Reference

The ST13003-K-HXY is a NPN bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 500V and continuous collector current of 1.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO500VBreakdown voltage
IC Max1.5ACollector current
Pd Max1.25WPower dissipation
Gain25DC current gain
Frequency5MHzTransition frequency
VCE(sat)600mV@1A,0.2ASaturation voltage
Vebo9VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
MJE13003(RANGE:20-30) NPN TO-126 400V 1A 1.25W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-252-2L 480V 1.5A 1.25W
YFW13003 NPN TO-126 480V 1.5A 1.25W
3DD4244DM NPN TO-126 400V 3A 60W
MJE340STU-HXY NPN TO-126 350V 500mA 625mW
MJE340 NPN SOT-32-3 300V 500mA 20.8W
View all TO-126 NPN Transistors ›