BRMJD112Q Transistor Datasheet

NPN BJT | BLUE ROCKET

NPNTO-252High Power
VCEO
100V
Ic Max
2A
Pd Max
20W
Gain
1000
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Quick Reference

The BRMJD112Q is a NPN bipolar transistor in a TO-252 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 2A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBLUE ROCKETOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO100VBreakdown voltage
IC Max2ACollector current
Pd Max20WPower dissipation
Gain1000DC current gain
Frequency25MHzTransition frequency
VCE(sat)3VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD44H11T4G NPN TO-252 80V 8A 50W
ZXT1053AKTC NPN TO-252 75V 5A 4W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD31C NPN TO-252 100V 3A 1.56W
MJD31CQ NPN TO-252 100V 3A 1.6W
2SD1733TLR NPN TO-252 80V 1A 10W
2SCR574D3TL1 NPN TO-252 80V 2A 10W
MJD44H11T4G-DW NPN TO-252 80V 8A 20W
2SD1816L-R-TN3-R NPN TO-252 100V 4A 1W
MJD122(MS) NPN TO-252 100V 6A 1.25W
View all TO-252 NPN Transistors ›