MJD44H11T4G-DW Transistor Datasheet

NPN BJT | DOWO

NPNTO-252High Power
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60
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Quick Reference

The MJD44H11T4G-DW is a NPN bipolar transistor in a TO-252 package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDOWOOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain60DC current gain
Frequency50MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD44H11T4G NPN TO-252 80V 8A 50W
ZXT1053AKTC NPN TO-252 75V 5A 4W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD31C NPN TO-252 100V 3A 1.56W
MJD31CQ NPN TO-252 100V 3A 1.6W
2SD1733TLR NPN TO-252 80V 1A 10W
2SCR574D3TL1 NPN TO-252 80V 2A 10W
2SD1816L-R-TN3-R NPN TO-252 100V 4A 1W
BRMJD112Q NPN TO-252 100V 2A 20W
MJD122(MS) NPN TO-252 100V 6A 1.25W
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