MJD41C(MS) Transistor Datasheet

NPN BJT | MSKSEMI

NPNTO-252General Purpose
VCEO
100V
Ic Max
9A
Pd Max
1.25W
Gain
75
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Quick Reference

The MJD41C(MS) is a NPN bipolar transistor in a TO-252 package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 9A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO100VBreakdown voltage
IC Max9ACollector current
Pd Max1.25WPower dissipation
Gain75DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo3MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD44H11T4G NPN TO-252 80V 8A 50W
ZXT1053AKTC NPN TO-252 75V 5A 4W
MJD44H11 NPN TO-252 80V 8A 1.75W
MJD31C NPN TO-252 100V 3A 1.56W
MJD31CQ NPN TO-252 100V 3A 1.6W
2SD1733TLR NPN TO-252 80V 1A 10W
2SCR574D3TL1 NPN TO-252 80V 2A 10W
MJD44H11T4G-DW NPN TO-252 80V 8A 20W
2SD1816L-R-TN3-R NPN TO-252 100V 4A 1W
BRMJD112Q NPN TO-252 100V 2A 20W
View all TO-252 NPN Transistors ›